Buried Interface Modification Strategy for Efficient Tin‐Based Perovskite Light‐Emitting Diodes
Zheng Jiang, Jie Yang, Wenbin Wang, Yangyu Liu, Yuhan Zhou, Jing Xu, Wei Wang, Hongyao Ding, Ya Zhong, Haifeng Zhao, Sai Bai, Weidong Xu, Wing Chung Tsoi, Changyuan Yu, Chunxiong Bao, Xiaodong Shen, Pengpeng Teng
Abstract
Tin (Sn)-based perovskites show great potential for environmentally friendly and high-performance light-emitting diodes (LEDs). However, the development of Sn-based perovskite LEDs (PeLEDs) lags significantly behind that of lead-based perovskites. This is mainly due to the faster crystallization rate of Sn-based perovskites that leads to a higher defect density in Sn-based perovskite films, thereby serious nonradiative recombination. Here, we demonstrated a buried interface modification (BIM) strategy to regulate the crystallization kinetics of Sn-based perovskite films by using carboxylate as multifunctional surface modifiers. We reveal that the buried interface is critical to improve the nucleation and crystallization of Sn-based perovskite films. As a result, efficient near-infrared Sn-based PeLEDs were achieved with an external quantum efficiency (EQE) of 11.9%. This work suggests an efficient and elegant route to obtain high-performance Sn-based perovskite films and devices.