Electronic structure of silicon oxynitride films grown by plasma-enhanced chemical vapor deposition for memristor application
Timofey V. Perevalov, В. А. Володин, Г. Н. Камаев, Andrei A. Gismatulin, S. G. Cherkova, Igor P. Prosvirin, K. N. Astankova, V. A. Gritsenko
Topics & Concepts
Plasma-enhanced chemical vapor depositionSilicon oxynitrideMaterials scienceSiliconAmorphous solidResistive random-access memoryChemical vapor depositionPlasmaBand gapAnalytical Chemistry (journal)NanotechnologyOptoelectronicsCrystallographyChemistrySilicon nitrideElectrodePhysical chemistryChromatographyPhysicsQuantum mechanicsAdvanced Memory and Neural ComputingSemiconductor materials and devicesThin-Film Transistor Technologies