Temperature dependence on bandgap of semiconductor photocatalysts
Yohei Cho, Akira Yamaguchi, Ryosuke Uehara, Sou Yasuhara, Takuya Hoshina, Masahiro Miyauchi
Abstract
Light irradiation onto a semiconductor generates heat; however, its electronic structure under high temperature has not yet been well investigated. In this study, we have carefully examined the temperature dependence on the bandgap of simple metal oxides, which are well-known photocatalysts, i.e., TiO2, CeO2, Nb2O5, SnO2 Ta2O5, WO3, ZnO, and ZrO2, using operando UV–visible spectroscopy under controlled temperature (from room temperature to 500 °C). Consequently, a linear decrease in bandgap was seen as a function of temperature with a different slope for each semiconductor. We found that the slope was dependent on the bonding distance between metal and oxygen. This finding is essential to develop a photocatalyst used under the condition involving photo-thermal effect.