Atomic layer deposition of Ru thin films using (2,4-dimethyloxopentadienyl)(ethylcyclopentadienyl)Ru and the effect of ammonia treatment during the deposition
Dae Seon Kwon, Cheol Hyun An, Sang Hyeon Kim, Dong Gun Kim, Junil Lim, Woojin Jeon, Cheol Seong Hwang
Abstract
Ruthenium thin films were grown through atomic layer deposition using (2,4-dimethyloxopentadienyl)(ethylcyclopentadienyl)Ru [Rudense®] and oxygen at temperatures ranging from 250 °C to 270 °C and chamber pressures ranging from 0.5 Torr to 2.5 Torr.
Topics & Concepts
TorrDeposition (geology)Materials scienceLayer (electronics)Atomic layer depositionRutheniumThin filmAmmoniaAnalytical Chemistry (journal)Inorganic chemistryNanotechnologyCatalysisChemistryEnvironmental chemistryOrganic chemistrySedimentThermodynamicsBiologyPhysicsPaleontologySemiconductor materials and devicesElectrocatalysts for Energy ConversionCatalytic Processes in Materials Science