Modelling charge transport and electro-optical characteristics of quantum dot light-emitting diodes
Sung‐Min Jung, Tae Hoon Lee, Sang Yun Bang, Soo Deok Han, Dong‐Wook Shin, Sanghyo Lee, Hyung Woo Choi, Yo‐Han Suh, Xiang‐Bing Fan, Jeong‐Wan Jo, Shijie Zhan, Jiajie Yang, Chatura Samarakoon, Yoonwoo Kim, Luigi G. Occhipinti, G.A.J. Amaratunga, Jong Min Kim
Abstract
Abstracts Quantum dot light-emitting diodes (QD-LEDs) are considered as competitive candidate for next-generation displays or lightings. Recent advances in the synthesis of core/shell quantum dots (QDs) and tailoring procedures for achieving their high quantum yield have facilitated the emergence of high-performance QD-LEDs. Meanwhile, the charge-carrier dynamics in QD-LED devices, which constitutes the remaining core research area for further improvement of QD-LEDs, is, however, poorly understood yet. Here, we propose a charge transport model in which the charge-carrier dynamics in QD-LEDs are comprehensively described by computer simulations. The charge-carrier injection is modelled by the carrier-capturing process, while the effect of electric fields at their interfaces is considered. The simulated electro-optical characteristics of QD-LEDs, such as the luminance, current density and external quantum efficiency (EQE) curves with varying voltages, show excellent agreement with experiments. Therefore, our computational method proposed here provides a useful means for designing and optimising high-performance QD-LED devices.