Low-Noise Amplifiers Using 100-nm Gate Length GaN-on-Silicon Process in <i>W</i>-Band
Xiaodong Tong, Penghui Zheng, Liang Zhang
Abstract
Two low-noise amplifiers fabricated with 100-nm gate length gallium nitride (GaN)-on-silicon process in W-band are presented in this work. One has a gain of 17.5-20.5 dB in 77.5-84 GHz with 3.8-4.7-dB noise figure (NF), the other has wider bandwidth of 78.5-90 GHz with 14.5-17-dB gain and 4.5-5.2-dB NF. The chip sizes of these two low-noise amplifiers (LNAs) are 3×1.6 mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> and 3×1.4 mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> separately. The power dissipation of these two LNAs is about 190 mW. These LNAs can be integrated with high-power GaN power amplifier on the same chip, which avoids the peripheral packaging loss and achieves smaller module size. The universal gate length in commercial process with low-cost silicon substrate brings these LNAs great potential for mass production in future millimeter-wave communications.