A memristor based on two-dimensional MoSe2/MoS2 heterojunction for synaptic device application
Ping Liu, Huiming Luo, Xiaomiao Yin, Xing-Fu Wang, Xuemin He, Jiangwei Zhu, Hongtao Xue, Weiwei Mao, Yong Pu
Abstract
Two-dimensional materials are promising for exploring memristors with excellent performance. However, the memristor still faces challenges in insufficient reliability due to resistance-switching mechanisms of conductive filaments. In this work, a typical metal/heterojunction/metal structure (Ag/MoSe2/MoS2/Au/Ti) was proposed as the device architecture of the memristor. The device exhibits stable bipolar resistive switching behavior with a high on–off ratio, long retention time, and good endurance. The resistance-switching is achieved by adjusting the interface barrier of the MoSe2/MoS2 due to the band modulation. Moreover, we explore the essential synaptic functions of this memristor device, with outstanding voltage pulse potentiation and depression. Our work highlights the significant prospects of MoSe2/MoS2 heterojunction in artificial synapses and neural networks.