Tunable terahertz phase shifter based on GaAs semiconductor technology

Abstract

We devised an electronically controllable plasmonic modulator capable of changing the phase of the transmitted electromagnetic wave. It is based on a well-established GaAs semiconductor technology. We demonstrate the phase tunability of the device over the range of up to 41° at the insertion loss of −2.2 dB. The phase shifter operates at frequencies of up to 0.27 THz and temperatures of up to 80 K. The design is readily scalable to a planar phased array—a key component in beamforming technologies used in THz communication.

Topics & Concepts