Influence of helium gas flow under the retort bottom to control the impurities in grown mc-Si ingot by DS process for photovoltaic application: Numerical simulation
S. Sugunraj, P. Karuppasamy, T. Keerthivasan, G. Aravindan, M. Avinash Kumar, M. Srinivasan, P. Ramasamy
Topics & Concepts
IngotMaterials scienceCrucible (geodemography)DislocationCrystal (programming language)HeliumImpurityNucleationMetallurgyFlow stressComposite materialAlloyChemistryComputer scienceOrganic chemistryComputational chemistryProgramming languageSilicon and Solar Cell TechnologiesThin-Film Transistor TechnologiesSolidification and crystal growth phenomena