Defect engineering and carrier dynamics in gallium-doped zinc oxide nanowires for light-emitting applications
M. Azizar Rahman, Rabiur Rahaman, Tanmoy Pramanik, Cuong Ton‐That
Abstract
The high doping levels of Ga in ZnO nanowires grown in an oxygen-rich environment quench the V Zn -related green luminescence and lead to the formation of Ga Zn V Zn intraband states responsible for intense orange luminescence.
Topics & Concepts
Materials scienceZincDopingNanowireGalliumOptoelectronicsNanotechnologyMetallurgyZnO doping and propertiesGas Sensing Nanomaterials and SensorsNanowire Synthesis and Applications