Litcius/Paper detail

Intel 22nm Low-Power FinFET (22FFL) Process Technology for 5G and Beyond

Hyung-Jin Lee, Steven Callender, Said Rami, Woorim Shin, Qiang Yu, Jose M. Marulanda

202037 citationsDOI

Abstract

Intel's 22FFL is the comprehensive FinFET technology offering the best-in-class RF transistors achieving ft and fmax above 300GHz and 450GHz, respectively. The addition of a high-power RF device (HyPowerFF) and enhanced mmWave BEOL support the opportunity to push silicon technology beyond the 5G era.

Topics & Concepts

TransistorSiliconPower (physics)Radio frequencyComputer scienceElectrical engineeringProcess (computing)Materials scienceOptoelectronicsElectronic engineeringEmbedded systemEngineeringOperating systemPhysicsVoltageQuantum mechanicsRadio Frequency Integrated Circuit DesignSemiconductor materials and devicesAdvancements in Semiconductor Devices and Circuit Design