Uniform self-rectifying resistive random-access memory based on an MXene-TiO<sub>2</sub> Schottky junction
Chao Zang, Bo Li, Yun Sun, Shun Feng, Xinzhe Wang, Xiaohui Wang, Dongming Sun
Abstract
Uniform self-rectifying RRAMs have been realized using a MXene-TiO 2 Schottky junction based on the field-induced modulation of Schottky barrier.
Topics & Concepts
Resistive random-access memoryMaterials scienceSchottky barrierOptoelectronicsSchottky diodeTrappingElectrodeRectificationResistive touchscreenOxideNanotechnologyVoltageDiodeElectrical engineeringChemistryBiologyPhysical chemistryMetallurgyEcologyEngineeringAdvanced Memory and Neural ComputingFerroelectric and Negative Capacitance DevicesNeuroscience and Neural Engineering