Performance enhancement of armchair graphene nanoribbon resonant tunneling diode using V-shaped potential well
Madhusudan Mishra, N. R. Das, N. K. Sahoo, Trinath Sahu
Abstract
Abstract We study the electron transport in armchair graphene nanoribbon (AGNR) resonant tunneling diode (RTD) using square and V-shaped potential well profiles. We use non-equilibrium Green’s function formalism to analyze the transmission and I–V characteristics. Results show that an enhancement in the peak current ( I p ) can be obtained by reducing the well width ( W w ) or barrier width ( W b ). As W w decreases, I p shifts to a higher peak voltage ( V p ), while there is almost no change in V p with decreasing W b . It is gratifying to note that there is an enhancement in I p by about 1.6 times for a V -shaped well over a square well. Furthermore, in the case of a V -shaped well, the negative differential resistance occurs in a shorter voltage range, which may beneficial for ultra-fast switching and high-frequency signal generation. Our work anticipates the suitability of graphene having better design flexibility, to develop ideally 2D RTDs for use in ultra-dense nano-electronic circuits and systems.