Ablation behavior of (Hf–Ta–Zr–Nb–Ti)C high‐entropy carbide and (Hf–Ta–Zr–Nb–Ti)C– <i>x</i> SiC composites
Yichen Wang, Duo Yu, Jie Yin, Buhao Zhang, Hangfeng Zhang, Xuejian Liu, Yulong An, Michael J. Reece, Qing Huang
Abstract
Abstract The ablation behavior of (Hf–Ta–Zr–Nb–Ti)C high‐entropy carbide (HEC‐0) was investigated using a plasma flame in air for different times (60, 90, and 120 s) at about 2100°C. The effect of SiC content on the ablation resistance of HEC– x SiC composites ( x = 10 and 20 vol%) was also studied. The linear ablation rate of HEC‐0 decreases with increasing ablation time, showing the positive role of the oxide layer with a complex composition. The linear ablation rate of HEC–10 vol% SiC (0.3 µm s −1 ) is only a 10th of that of HEC‐0, showing a significant improvement in ablation resistance, probably due to the formation of a protective oxide layer containing melted SiO 2 and refractory Hf–Zr–Si–O oxides.