Switchable Asymmetric Moiré Patterns with Strongly Localized States
Zhigang Song, Xiaotian Sun, Lin‐Wang Wang
Abstract
Most moiré pattern structures are constructed by twisting the angle of two similar 2D materials. The corresponding electronic structures are fixed in device applications. Here we study moiré patterns constructed with monolayers of InSe and ferroelectric In2Se3. The ferroelectricity of In2Se3 induces deep electron trap states and allows the switch of moiré pattern by an applied electric field. Using a unique linear scaling computational method, we systematically studied the electronic structures, localized state sizes, and strong correlation effects of switchable moiré patterns of systems containing close to 10 000 atoms.
Topics & Concepts
Moiré patternFerroelectricityScalingMaterials scienceCondensed matter physicsElectric fieldMonolayerLinear scaleElectronOptoelectronicsOpticsNanotechnologyPhysicsGeometryMathematicsDielectricQuantum mechanicsGeographyGeodesyPerovskite Materials and Applications2D Materials and ApplicationsSemiconductor Quantum Structures and Devices