Schottky Barrier Height and Image Force Lowering in Monolayer MoS2 Field Effect Transistors
Yonatan Vaknin, Ronen Dagan, Y. Rosenwaks
Abstract
Understanding the nature of the barrier height in a two-dimensional semiconductor/metal interface is an important step for embedding layered materials in future electronic devices. We present direct measurement of the Schottky barrier height and its lowering in the transition metal dichalcogenide (TMD)/metal interface of a field effect transistor. It is found that the barrier height at the gold/ single-layer molybdenum disulfide (MoS2) interfaces decreases with increasing drain voltage, and this lowering reaches 0.5–1 V We also show that increase of the gate voltage induces additional barrier lowering.
Topics & Concepts
Schottky barrierMaterials scienceMonolayerMolybdenum disulfideOptoelectronicsTransistorField-effect transistorBarrier layerSubthreshold slopeSemiconductorLayer (electronics)VoltageNanotechnologyDiodeComposite materialElectrical engineeringEngineering2D Materials and ApplicationsGraphene research and applicationsNanowire Synthesis and Applications