Luminescence Properties of Defects in GaN: Solved and Unsolved Problems
M. A. Reshchikov
Abstract
Gallium Nitride (GaN) is a wide-bandgap semiconductor that has revolutionized optoelectronic applications, enabling blue/white light-emitting devices and high-power electronics. Point defects in GaN strongly influence its optical and electronic properties, producing both beneficial and detrimental effects. This review provides a comprehensive update on the current understanding of point defects in GaN and their impact on photoluminescence (PL). Since our earlier review (Reshchikov and Morkoç, J. Appl. Phys. 2005, 97, 061301), substantial progress has been made in this field. PL bands associated with major intrinsic and extrinsic defects in GaN are now much better understood, and several defects in undoped GaN (arising from unintentional impurities or specific growth conditions) have been identified. Notably, the long-debated origin of the yellow luminescence band in GaN has been resolved, and the roles of Ga and N vacancies in the optical properties of GaN have been revised. Zero-phonon lines have been discovered for several defects. Key parameters, such as electron- and hole-capture coefficients, phonon energies, electron–phonon coupling strength, thermodynamic charge transition levels, and the presence of excited states, have been determined or refined. Despite these advances, several puzzles associated with PL remain unsolved, highlighting areas for future investigation.