Investigating the Power Conversion Efficiency at 16.5% of CIGS Solar Cell Through Device Simulations
Nikhil Shrivastav, Savita Kashyap, Rahul Pandey, Nikhil Shrivastav
Abstract
Copper indium gallium selenide (CIGS) is the most promising material owing to its low cost, superior optical properties, high performance, low-temperature coefficient, direct bandgap, long-term stability, and high absorption coefficient. Thus, here in this work, a single-junction solar cell by employing CIGS (E g =1.1 eV) material has been investigated. Further, the CdS buffer layer is also used, which contributes to the p-n junction formation. The cell is optimized for maximum conversion efficiency (16.5%) by collectively varying the thickness of CIGS and bulk defect density using the SCAPS-1D tool.
Topics & Concepts
Copper indium gallium selenide solar cellsMaterials scienceGalliumOptoelectronicsEnergy conversion efficiencySolar cellIndiumBand gapAttenuation coefficientSelenideAbsorption (acoustics)OpticsComposite materialMetallurgyPhysicsSeleniumChalcogenide Semiconductor Thin FilmsQuantum Dots Synthesis And Propertiessolar cell performance optimization