Determination of the concentration of impurities in GaN from photoluminescence and secondary-ion mass spectrometry
M. A. Reshchikov, Mykhailo Vorobiov, Oleksandr Andrieiev, Kai Ding, N. Izyumskaya, V. Avrutin, A. Usikov, H. Helava, Yu.N. Makarov
Abstract
Abstract Photoluminescence (PL) was used to estimate the concentration of carbon in GaN grown by hydride vapor phase epitaxy (HVPE). The PL data were compared with profiles of the impurities obtained from secondary ion mass spectrometry (SIMS) measurements. Comparison of PL and SIMS data has revealed that apparently high concentrations of C and O at depths up to 1 µm in SIMS profiles do not represent depth distributions of these species in the GaN matrix but are rather caused by post-growth surface contamination and knocking-in impurity species from the surface. In particular, PL analysis supplemented by reactive ion etching up to the depth of 400 nm indicates that the concentration of carbon in nitrogen sites is below 2–5 × 10 15 cm −3 at any depth of GaN samples grown by HVPE. We demonstrate that PL is a very sensitive and reliable tool to determine the concentrations of impurities in the GaN matrix.