Vertical Nonvolatile Schottky‐Barrier‐Field‐Effect Transistor with Self‐Gating Semimetal Contact
Yaoqiang Zhou, Lei Tong, Zefeng Chen, Tao Li, Hao Li, Yue Pang, Jianbin Xu
Abstract
Abstract Emerging 2D nonvolatile Schottky‐barrier‐field‐effect transistors (NSBFETs) are envisaged to build a promising reconfigurable in‐memory architecture to mimic the brain. Herein, a vertically stacked multilayered graphene (MGr)‐molybdenum disufide (MoS 2 )‐tungsten ditelluride (WTe 2 ) NSBFET is reported. The semimetal WTe 2 with the charge‐trapping effect enables the simultaneous integration of the electrode and the self‐gating function. The effective Schottky barrier height offset ΔΦ B is programed from ΔΦ B‐p = 132.6 meV to ΔΦ B‐n = 109.4 meV, inducing the reversed built‐in electric field to make the NSBFET, so as to provide one with a multifunctional platform to integrate the nonvolatility and the reconfigurable self‐powered photo response. The reversible open‐circuit voltages of NSBFET synapse are programmed from −0.1 to 0.25 V and the self‐powered responsivity with reversed signs is tuned from 290 to −50 mA W −1 , which enables the representation of a signed weight in a single device to enrich multiple optical sensing and computing capabilities.