Effect of Adventitious Carbon on Pit Formation of Monolayer MoS<sub>2</sub>
Sangwook Park, Samira Siahrostami, Joonsuk Park, Amir Hassan Bagherzadeh Mostaghimi, Taeho Roy Kim, Lauren Vallez, Thomas Mark Gill, Woosung Park, Kenneth E. Goodson, Robert Sinclair, Xiaolin Zheng
Abstract
Abstract Forming pits on molybdenum disulfide (MoS 2 ) monolayers is desirable for (opto)electrical, catalytic, and biological applications. Thermal oxidation is a potentially scalable method to generate pits on monolayer MoS 2 , and pits are assumed to preferentially form around undercoordinated sites, such as sulfur vacancies. However, studies on thermal oxidation of MoS 2 monolayers have not considered the effect of adventitious carbon (C) that is ubiquitous and interacts with oxygen at elevated temperatures. Herein, the effect of adventitious C on the pit formation on MoS 2 monolayers during thermal oxidation is studied. The in situ environmental transmission electron microscopy measurements herein show that pit formation is preferentially initiated at the interface between adventitious C nanoparticles and MoS 2 , rather than only sulfur vacancies. Density functional theory (DFT) calculations reveal that the C/MoS 2 interface favors the sequential adsorption of oxygen atoms with facile kinetics. These results illustrate the important role of adventitious C on pit formation on monolayer MoS 2 .