Improved breakdown voltage mechanism in AlGaN/GaN HEMT for RF/Microwave applications: Design and physical insights of dual field plate
Abdul Naim Khan, Aasif Mohammad Bhat, K. Jena, Trupti Ranjan Lenka, Gaurav Chatterjee
Topics & Concepts
High-electron-mobility transistorBreakdown voltageMaterials scienceOptoelectronicsElectric fieldVoltagePassivationSource fieldLeakage (economics)MicrowaveElectrical engineeringTransistorOpticsPhysicsLayer (electronics)Near and far fieldNanotechnologyEngineeringQuantum mechanicsEconomicsMacroeconomicsGaN-based semiconductor devices and materialsSilicon Carbide Semiconductor TechnologiesSemiconductor Quantum Structures and Devices