Bipolar Resistive Switching in 2D MoSe <sub>2</sub> Grown by Atmospheric Pressure Chemical Vapor Deposition
João Fernandes, Justyna Grzonka, Guilherme Araújo, Alejandro Schulman, Vítor Silva, João Rodrigues, João Santos, Олександр Бондарчук, Paulo J. Ferreira, Pedro Alpuim, Andrea Capasso
Abstract
Two-dimensional (2D) transition metal dichalcogenides (TMDCs) are highly promising nanomaterials for various electronic devices such as field-effect transistors, junction diodes, tunneling devices, and, more recently, memristors. 2D MoSe 2 stands out for having high electrical conductivity, charge carrier mobility, and melting point. While these features make it particularly appropriate as a switching layer in memristive devices, reliable and scalable production of large-area 2D MoSe 2 still represents a challenge. In this study, we manufacture 2D MoSe 2 films by atmospheric-pressure chemical vapor deposition and investigate them on the atomic scale. We selected and transferred MoSe 2 bilayer to serve as a switching layer between asymmetric Au–Cu electrodes in miniaturized crossbar vertical memristors. The electrochemical metallization devices showed forming-free, bipolar resistive switching at low voltages, with clearly identifiable nonvolatile states. Other than low-power neuromorphic computing, low switching voltages approaching the range of biological action potentials could unlock hybrid biological interfaces.