Characteristics and techniques of GaN-based micro-LEDs for application in next-generation display
Zhou Wang, Xinyi Shan, Xugao Cui, Pengfei Tian
Abstract
Abstract Due to the excellent optoelectronic properties, fast response time, outstanding power efficiency and high stability, micro-LED plays an increasingly important role in the new generation of display technology compared with LCD and OLED display. This paper mainly introduces the preparation methods of the GaN-based micro-LED array, the optoelectronic characteristics, and several key technologies to achieve full-color display, such as transfer printing, color conversion by quantum dot and local strain engineering.
Topics & Concepts
OptoelectronicsMaterials scienceLiquid-crystal displayLight-emitting diodeTransfer printingOLEDFlexible displayLED displayFull colorComputer scienceNanotechnologyElectrical engineeringEngineeringThin-film transistorLayer (electronics)Composite materialGaN-based semiconductor devices and materialsZnO doping and propertiesAdvanced Sensor and Energy Harvesting Materials