Facile integration of MoS <sub>2</sub> /SiC photodetector by direct chemical vapor deposition
Yifan Xiao, Min Long, Xinke Liu, Wen-Jun Liu, Usman Younis, Tonghua Peng, Xuanwu Kang, Xiaohan Wu, Shijin Ding, David Wei Zhang
Abstract
Abstract The MoS 2 photodetector on different substrates stacked via van der Waals force has been explored extensively because of its great potential in optoelectronics. Here, we integrate multilayer MoS 2 on monocrystalline SiC substrate though direct chemical vapor deposition. The MoS 2 film on SiC substrate shows high quality and thermal stability, in which the full width at half‐maximum and first‐order temperature coefficient for the Raman mode are 4.6 cm −1 and −0.01382 cm −1 /K, respectively. The fabricated photodetector exhibits excellent performance in the UV and visible regions, including an extremely low dark current of ~1 nA at a bias of 20 V and a low noise equivalent of 10 −13 –10 −15 W/Hz 1/2 . The maximum responsivity of the MoS 2 /SiC photodetector is 5.7 A/W with the incident light power of 4.35 μW at 365 nm (UV light). Furthermore, the maximum photoconductive gain, noise equivalent power, and normalized detectivity for the fabricated detector under 365 nm illumination are 79.8, 7.08 × 10 −15 W/Hz 1/2 , and 3.07 × 10 10 Jonesat, respectively. We thus demonstrate the possibility for integrating high‐performance photodetectors array based on MoS 2 /SiC via direct chemical vapor growth.