Evidence for highly p-type doping and type II band alignment in large scale monolayer WSe<sub>2</sub>/Se-terminated GaAs heterojunction grown by molecular beam epitaxy
Debora Pierucci, Aymen Mahmoudi, Mathieu G. Silly, F. Bisti, Fabrice Oehler, G. Patriarche, Frédéric Bonell, A. Marty, Céline Vergnaud, Matthieu Jamet, H. Boukari, Emmanuel Lhuillier, Marco Pala, Abdelkarim Ouerghi
Abstract
Two-dimensional materials (2D) arranged in hybrid van der Waals (vdW) heterostructures provide a route toward the assembly of 2D and conventional III–V semiconductors.
Topics & Concepts
Molecular beam epitaxyMonolayerHeterojunctionDopingMaterials scienceOptoelectronicsEpitaxyLayer (electronics)Nanotechnology2D Materials and ApplicationsChalcogenide Semiconductor Thin FilmsQuantum Dots Synthesis And Properties