Influence of Precursor Density and Conversion Time on the Orientation of Vapor-Deposited ZIF-8
Marianne Kräuter, Alexander John Cruz, Timothée Stassin, Sabina Rodríguez‐Hermida, Rob Ameloot, Roland Resel, Anna Maria Coclite
Abstract
ZIF-8 was synthesized by subjecting ZnO thin films deposited via plasma-enhanced atomic layer deposition to a 2-methylimidazole vapor. The impact of the conversion time as well as the density and thickness of the ZnO precursor on the resulting ZIF-8 layers were investigated. Grazing Incidence X-ray diffraction reveals a preferred (100) or (111) orientation of the ZIF-8 crystals, depending on thickness and density of the precursor, and with a more prominent orientation at longer conversion times. The onset of crystallization occurs after 20 min of conversion for the less dense precursor, compared to 40 min for the denser one. The ZIF-8 thickness and roughness increase with conversion time. The final thickness of the ZIF-8 layer depends on the thickness and density of the precursor layer, and can be up to 15-fold higher than the precursor thickness.