Physical origin of hafnium-based ferroelectricity
Shuning Lv, Tengfei Cao, Zihe Wang, Tingxiao Xie, Shuang Gao, Gilberto Teobaldi, Qi Hu, Bo Sun
Abstract
This review presents an overview of the developmental history of hafnium-based ferroelectric materials and their various potential applications. It delves into the origins of hafnium-based ferroelectric phases and summarizes recent research advancements from thermodynamic and kinetic perspectives. Additionally, it explores the crystal structures of hafnium-based ferroelectric materials, phase transition mechanisms influenced by phonons, polarization reversal, and the dynamic evolutions of ferroelectric domain boundaries. The review further examines different methods for controlling the stability and optimizing the performance of hafnium-based ferroelectric phases, including doping, stress modulation, oxygen vacancies, and interface effects. These techniques are vital for stabilizing the necessary ferroelectric phases and enhancing the electrical properties of the material significantly. By establishing a connection between theoretical and experimental studies of the origins of hafnium-based ferroelectrics, this review offers solid theoretical support and technical guidance for future development of high-performance hafnium-based ferroelectric devices.