III-V-on-Si DFB Laser With Co-Integrated Power Amplifier Realized Using Micro-Transfer Printing
Jing Zhang, Laurens Bogaert, Bahawal Haq, Ruohui Wang, Bozena Matuskova, Johanna Rimböck, Stefan Ertl, Agnieszka Gocalińska, E. Pelucchi, Brian Corbett, Joris Van Campenhout, Guy Lepage, Peter Verheyen, Geert Morthier, Günther Roelkens
Abstract
A C-band III-V-on-Si distributed feedback (DFB) laser with co-integrated power amplifier was realized using micro-transfer printing. The DFB laser exhibits single mode operation around 1540 nm at 20°C. By driving the DFB laser and co-integrated power amplifier simultaneously, up to 14 dBm waveguide-coupled output power with over 28 dB side mode suppression ratio was achieved at an overall bias current of 270 mA.
Topics & Concepts
AmplifierMaterials scienceLaserDistributed feedback laserOptoelectronicsdBmPower (physics)Laser power scalingBiasingOpticsElectrical engineeringVoltageEngineeringPhysicsWavelengthQuantum mechanicsCMOSPhotonic and Optical DevicesSemiconductor Quantum Structures and DevicesPhotonic Crystals and Applications