All-inorganic perovskite quantum dot light-emitting memories
Meng-Cheng Yen, Chia-Jung Lee, Kang-Hsiang Liu, Yi Peng, Junfu Leng, Tzu-Hsuan Chang, Chun-Chieh Chang, Kaoru Tamada, Ya‐Ju Lee
Abstract
Abstract Field-induced ionic motions in all-inorganic CsPbBr 3 perovskite quantum dots (QDs) strongly dictate not only their electro-optical characteristics but also the ultimate optoelectronic device performance. Here, we show that the functionality of a single Ag/CsPbBr 3 /ITO device can be actively switched on a sub-millisecond scale from a resistive random-access memory (RRAM) to a light-emitting electrochemical cell (LEC), or vice versa, by simply modulating its bias polarity. We then realize for the first time a fast, all-perovskite light-emitting memory (LEM) operating at 5 kHz by pairing such two identical devices in series, in which one functions as an RRAM to electrically read the encoded data while the other simultaneously as an LEC for a parallel, non-contact optical reading. We further show that the digital status of the LEM can be perceived in real time from its emission color. Our work opens up a completely new horizon for more advanced all-inorganic perovskite optoelectronic technologies.