Light response behaviors of amorphous In–Ga–Zn–O thin-film transistors <i>via in situ</i> interfacial hydrogen doping modulation
Xiaolin Wang, Yan Shao, Xiaohan Wu, Meina Zhang, Lingkai Li, Wen-Jun Liu, David Wei Zhang, Shi‐Jin Ding
Abstract
Thin-film transistors (TFTs) based on amorphous In–Ga–Zn–O (a-IGZO) channels present high mobility, large-area uniformity, mechanical flexibility and photosensitivity, and thus have extensive applicability in photodetectors, wearable devices, <italic>etc.</italic>
Topics & Concepts
Materials scienceThin-film transistorOptoelectronicsDopingAmorphous solidActive layerPhotodetectorPhotosensitivityThin filmTransistorNanotechnologyLayer (electronics)VoltageChemistryElectrical engineeringOrganic chemistryEngineeringThin-Film Transistor TechnologiesAdvanced Memory and Neural ComputingTransition Metal Oxide Nanomaterials