Integration of boron arsenide cooling substrates into gallium nitride devices
Joon Sang Kang, Man Li, Huan Wu, Huuduy Nguyen, Toshihiro Aoki, Yongjie Hu
Topics & Concepts
Materials scienceGallium arsenideOptoelectronicsThermal conductivityGallium nitrideWide-bandgap semiconductorSemiconductorBand gapBoron nitrideDiamondGallium phosphideNanotechnologyComposite materialLayer (electronics)Thermal properties of materialsGaN-based semiconductor devices and materialsAdvancements in Semiconductor Devices and Circuit Design