Comparison of C face (000 $$\overline{1}$$) and Si face (0001) of silicon carbide wafers in femtosecond laser irradiation assisted chemical–mechanical polishing process
Yuan-Di Chen, Hsiang-Yi Liu, Chiao-Yang Cheng, Chih-Chun Chen
Topics & Concepts
Materials scienceFluenceLaserIrradiationFemtosecondWaferSilicon carbideOptoelectronicsSiliconPolishingOpticsComposite materialNuclear physicsPhysicsAdvanced Surface Polishing TechniquesLaser Material Processing TechniquesDiamond and Carbon-based Materials Research