Realization of excellent ferroelectricity in PDA-derived Hf0.5Zr0.5O2 films through insertion of an ultrathin Ti metal layer
Haiyan Chen, Hang Luo, Xi Yuan, Dou Zhang
Topics & Concepts
Materials scienceFerroelectricityAnnealing (glass)CapacitorElectrodeOptoelectronicsLayer (electronics)MetalPolarization (electrochemistry)CoercivityWork functionNanotechnologyComposite materialVoltageDielectricMetallurgyElectrical engineeringCondensed matter physicsPhysical chemistryChemistryEngineeringPhysicsFerroelectric and Negative Capacitance DevicesMXene and MAX Phase MaterialsSemiconductor materials and devices