Long Duration Persistent Photocurrent in 3 nm Thin Doped Indium Oxide for Integrated Light Sensing and In‐Sensor Neuromorphic Computation
Aishani Mazumder, Chung Kim Nguyen, Thiha Aung, Mei Xian Low, Md. Ataur Rahman, Salvy P. Russo, Sherif Abdulkader Tawfik, Shifan Wang, James Bullock, Vaishnavi Krishnamurthi, Nitu Syed, Abhishek Ranjan, Ali Zavabeti, Irfan Haider Abidi, Xiangyang Guo, Yongxiang Li, Taimur Ahmed, Torben Daeneke, Akram Al‐Hourani, Sivacarendran Balendhran, Sumeet Walia
Abstract
Abstract Miniaturization and energy consumption by computational systems remain major challenges to address. Optoelectronics based synaptic and light sensing provide an exciting platform for neuromorphic processing and vision applications offering several advantages. It is highly desirable to achieve single‐element image sensors that allow reception of information and execution of in‐memory computing processes while maintaining memory for much longer durations without the need for frequent electrical or optical rehearsals. In this work, ultra‐thin (<3 nm) doped indium oxide (In 2 O 3 ) layers are engineered to demonstrate a monolithic two‐terminal ultraviolet (UV) sensing and processing system with long optical state retention operating at 50 mV. This endows features of several conductance states within the persistent photocurrent window that are harnessed to show learning capabilities and significantly reduce the number of rehearsals. The atomically thin sheets are implemented as a focal plane array (FPA) for UV spectrum based proof‐of‐concept vision system capable of pattern recognition and memorization required for imaging and detection applications. This integrated light sensing and memory system is deployed to illustrate capabilities for real‐time, in‐sensor memorization, and recognition tasks. This study provides an important template to engineer miniaturized and low operating voltage neuromorphic platforms across the light spectrum based on application demand.