Improved synaptic performances with tungsten-doped indium-tin-oxide alloy electrode for tantalum oxide-based resistive random-access memory devices
Chandreswar Mahata, Juyeong Pyo, Beomki Jeon, Muhammad Ismail, Janghyuk Moon, Sungjun Kim
Topics & Concepts
Materials scienceResistive random-access memoryOptoelectronicsIndium tin oxideTitanium nitrideElectrodeNanotechnologyNitrideThin filmLayer (electronics)ChemistryPhysical chemistryAdvanced Memory and Neural ComputingTransition Metal Oxide NanomaterialsNeuroscience and Neural Engineering