Near 100% external quantum efficiency 1550-nm broad spectrum photodetector
Yang Shen, Xingjun Xue, Andrew H. Jones, Yiwei Peng, Junyi Gao, Ta Ching Tzu, Matt Konkol, Joe C. Campbell
Abstract
We report InGaAs/InP based p-i-n photodiodes with an external quantum efficiency (EQE) above 98% from 1510 nm to 1575 nm. For surface normal photodiodes with a diameter of 80 µm, the measured 3-dB bandwidth is 3 GHz. The saturation current is 30.5 mA, with an RF output power of 9.3 dBm at a bias of -17 V at 3 GHz.
Topics & Concepts
Quantum efficiencyPhotodiodePhotodetectorOpticsOptoelectronicsBandwidth (computing)Materials scienceAvalanche photodiodeSaturation currentPhysicsDetectorTelecommunicationsVoltageComputer scienceQuantum mechanicsAdvanced Optical Sensing TechnologiesSemiconductor Quantum Structures and DevicesPhotonic and Optical Devices