Modulation of Spin–Orbit Torque from SrRuO<sub>3</sub> by Epitaxial‐Strain‐Induced Octahedral Rotation
Jing Zhou, Xinyu Shu, Weinan Lin, Ding Fu Shao, Shaohai Chen, Liang Liu, Ping Yang, Evgeny Y. Tsymbal, Jingsheng Chen
Abstract
Abstract Spin–orbit torque (SOT), which arises from the spin–orbit coupling of conduction electrons, is believed to be the key route for developing low‐power, high‐speed, and nonvolatile memory devices. Despite the theoretical prediction of pronounced Berry phase curvatures in certain transition‐metal perovskite oxides, which lead to considerable intrinsic spin Hall conductivity, SOT from this class of materials has rarely been reported until recently. Here, the SOT generated by epitaxial SrRuO 3 of three different crystal structures is systematically studied. The results of both spin‐torque ferromagnetic resonance and in‐plane harmonic Hall voltage measurements concurrently reveal that the intrinsic SOT efficiency of SrRuO 3 decreases when the epitaxial strain changes from tensile to compressive. The X‐ray diffraction data demonstrate a strong correlation between the magnitude of SOT and octahedral rotation around the in‐plane axes of SrRuO 3 , consistent with the theoretical prediction. This work offers new possibilities of tuning SOT with crystal structures and novel opportunities of integrating the unique properties of perovskite oxides with spintronic functionalities.