Leakage current lowering and film densification of ZrO2 high-k gate dielectrics by layer-by-layer, in-situ atomic layer hydrogen bombardment
K.T. Huang, Teng-Jan Chang, Chunyuan Wang, Sheng‐Han Yi, Chin-I Wang, Yu‐Sen Jiang, Yu‐Tung Yin, Hsin-Chih Lin, Miin‐Jang Chen
Topics & Concepts
Materials scienceAtomic layer depositionX-ray photoelectron spectroscopyDielectricLayer (electronics)Gate dielectricOptoelectronicsLeakage (economics)HydrogenBarrier layerMonolayerCapacitorCapacitanceSemiconductorAnalytical Chemistry (journal)NanotechnologyTransistorElectrodeChemical engineeringVoltageElectrical engineeringMacroeconomicsPhysical chemistryEngineeringOrganic chemistryChromatographyEconomicsChemistrySemiconductor materials and devicesFerroelectric and Negative Capacitance DevicesAdvanced Memory and Neural Computing