On the possible nature of deep centers in Ga2O3
A. Y. Polyakov, А. I. Kochkova, Amanda Langørgen, Lasse Vines, A.A. Vasil'ev, Ivan Shchemerov, A.A. Romanov, S. J. Pearton
Abstract
The electric field dependence of emission rate of the deep traps with level near Ec−0.6 eV, so-called E1 traps, was studied by means of deep level transient spectroscopy measurements over a wide range of applied voltages. The traps were initially introduced by 900 °C ampoule annealing in molecular hydrogen. The results indicate the activation energy of the centers and the ratio of high-field to low-field electron emission rates at a fixed temperature scale as the square root of electric field, suggesting that the centers behave as deep donors. The possible microscopic nature of the centers in view of recent theoretical calculations is discussed. The most likely candidates for the E1 centers are SiGa1–H or SnGa2–H complexes.