A comparison of Au/n-Si Schottky diodes (SDs) with/without a nanographite (NG) interfacial layer by considering interlayer, surface states (N <sub>ss</sub> ) and series resistance (R <sub>s</sub> ) effects
S. Demirezen, Ş. Altındal, Yashar Azizian‐Kalandaragh, Ahmet Muhammed Akbaş
Abstract
Abstract In this paper, an organic interlayer, R s , and N ss on the transport- mechanisms (TMs), both the Au/n-Si (MS) and Au/(Nanographite-PVP/n-Si (MPS) (SDs) were performed onto the same Si-wafer in same-conditions. Some electrical parameters of them have been investigated. The interface-traps/states ( D it /N ss ) were extracted from the I F – V F data as function of energy (E c –E ss ). These results show that the N ss for MPS is much-lower than MS SD and increase from the midgap-energy towards the E c like U-shape. Double-logarithmic I F – V F graphs of them show three linear-regimes for low, intermediate, and high-voltages and in these regimes, TM are governed by ohmic, trap/space charge limited currents (TCLCs/SCLCs), respectively. All these results show that (NG:PVP) interlayer leads to an increase in rectifier-ratio (RR = I F /I R ), BH, R sh , and decrease in N ss , reverse saturation-current ( I o ), and n. Thus, (NG:PVP) can be successfully utilized as interfacial layer with high performance characteristics.