Anomalous Dimensionality‐Driven Phase Transition of MoTe<sub>2</sub> in Van der Waals Heterostructure
Huije Ryu, Yangjin Lee, Hyun‐Jung Kim, Seoung‐Hun Kang, Yoongu Kang, Kangwon Kim, Jungcheol Kim, Blanka Janicek, Kenji Watanabe, Takashi Taniguchi, Pinshane Y. Huang, Hyeonsik Cheong, In‐Ho Jung, Kwanpyo Kim, Young‐Woo Son, Gwan‐Hyoung Lee
Abstract
Abstract Phase transition in nanomaterials is distinct from that in 3D bulk materials owing to the dominant contribution of surface energy. Among nanomaterials, 2D materials have shown unique phase transition behaviors due to their larger surface‐to‐volume ratio, high crystallinity, and lack of dangling bonds in atomically thin layers. Here, the anomalous dimensionality‐driven phase transition of molybdenum ditelluride (MoTe 2 ) encapsulated by hexagonal boron nitride (hBN) is reported. After encapsulation annealing, single‐crystal 2H‐MoTe 2 transformed into polycrystalline T d ‐MoTe 2 with tilt‐angle grain boundaries of 60°‐glide‐reflection and 120°‐twofold rotation. In contrast to conventional nanomaterials, the hBN‐encapsulated MoTe 2 exhibit a deterministic dependence of the phase transition on the number of layers, in which the thinner MoTe 2 has a higher 2H‐to‐T d phase transition temperature. In addition, the vertical and lateral phase transitions of the stacked MoTe 2 with different crystalline orientations can be controlled by inserted graphene layers and the thickness of the heterostructure. Finally, it is shown that seamless T d contacts for 2H‐MoTe 2 transistors can be fabricated by using the dimensionality‐driven phase transition. The work provides insight into the phase transition of 2D materials and van der Waals heterostructures and illustrates a novel method for the fabrication of multi‐phase 2D electronics.