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84%-Efficiency Fully Integrated Voltage Regulator for Computing Systems Enabled by 2.5-D High-Density MIM Capacitor

Hesheng Lin, Dimitrios Velenis, P. Nolmans, Xiao Sun, Francky Catthoor, Rudy Lauwereins, Geert Van der Plas, Eric Beyne

2022IEEE Transactions on Very Large Scale Integration (VLSI) Systems15 citationsDOI

Abstract

We present a <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu \text{m}$ </tex-math></inline-formula> -thin-profile power delivery solution including a charge pump with integrated passives. Targeting 1 W/mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> or higher power density, a 2.5-D high-density metal-insulator-metal (MIM) capacitor deposited on high aspect ratio (HAR) (up to 5) oxide studs is proposed. With approximately 25-nm-thick HfAlOx dielectric, its measured capacitance density is 25.4 nF/mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> for a capacitor size ranging from 1/16 mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> to 1 mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> . This shows <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$3.6\times $ </tex-math></inline-formula> density improvement compared with the planar MIM. Theoretically, 86 nF/mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> [email protected] bias can be obtained if a 10-nm dielectric is deposited. Moreover, the measured leakage current density is within 65 pA/mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> at 1-V bias (negligible for a 1 W/mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> -power delivery). For a backside (BS) power delivery, this 2.5-D MIM capacitor can be realized by only three BS metal layers. This enables the low-cost and thin-profile delivery system ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\sim \!\!\mu \text{m}$ </tex-math></inline-formula> thickness), and the whole power delivery efficiency including a 1/2-ratio charge pump is <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\eta \,\,=84$ </tex-math></inline-formula> %@1 W/mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> (>5% boost in the power efficiency).

Topics & Concepts

CapacitorCapacitancePhysicsQuantum mechanicsVoltageElectrodeSemiconductor materials and devicesFerroelectric and Negative Capacitance DevicesAdvancements in Semiconductor Devices and Circuit Design