The initial oxidation of the 4H-SiC (0001) surface with C-related point defects: Insight by first-principles calculations
Shengsheng Wei, Zhipeng Yin, Jiao Bai, Weiwei Xie, Fuwen Qin, Yan Su, Dejun Wang
Topics & Concepts
Dangling bondCrystallographic defectChemisorptionVacancy defectOxygenMaterials scienceChemical physicsInterstitial defectCrystallographyDiffusionAdsorptionChemistryPhysical chemistrySiliconThermodynamicsMetallurgyDopingOptoelectronicsPhysicsOrganic chemistrySilicon Carbide Semiconductor TechnologiesSemiconductor materials and devicesCopper Interconnects and Reliability