One-Transistor Ternary Content-Addressable Memory Based on Localized Ferroelectric Switching for Massive and Accurate Routing
Minjeong Ryu, Jae Seung Woo, Chae Lin Jung, Woo Young Choi
Abstract
A novel one-transistor (1T) ternary content-addressable memory (TCAM) in which the don’t care state ‘X’ is implemented based on the localized ferroelectric polarization switching in the ambipolar ferroelectric tunnel field-effect transistors is proposed. Using local polarization switching scheme, two threshold voltages for forward and ambipolar modes are independently shifted to write ‘X’. Cell characteristics are experimentally demonstrated to be superior to conventional 1T TCAM implementation in terms of leakage current suppression and variation robustness. Consequently, the proposed 1T TCAM enables reliable in-memory search operations in massive arrays.
Topics & Concepts
Ambipolar diffusionTransistorFerroelectricityNon-volatile memoryTernary operationRobustness (evolution)Materials scienceOptoelectronicsVoltageComputer scienceField-effect transistorContent-addressable memoryPolarization (electrochemistry)Memory cellElectronic engineeringThreshold voltageElectrical engineeringPhysicsEngineeringDielectricElectronChemistryPhysical chemistryGeneQuantum mechanicsBiochemistryProgramming languageMachine learningArtificial neural networkFerroelectric and Negative Capacitance DevicesAdvanced Memory and Neural ComputingMXene and MAX Phase Materials