Spin Defects in hBN assisted by Metallic Nanotrenches for Quantum Sensing
Hongbing Cai, Shihao Ru, Zhengzhi Jiang, John J. H. Eng, Ruihua He, Fuli Li, Yansong Miao, J. Zúñiga‐Pérez, Weibo Gao
Abstract
The omnipresence of hexagonal boron nitride (hBN) in devices embedding two-dimensional materials has prompted it as the most sought after platform to implement quantum sensing due to its testing while operating capability. The negatively charged boron vacancy ( V B – ) in hBN plays a prominent role, as it can be easily generated while its spin population can be initialized and read out by optical means at room-temperature. But the lower quantum yield hinders its widespread use as an integrated quantum sensor. Here, we demonstrate an emission enhancement amounting to 400 by nanotrench arrays compatible with coplanar waveguide (CPW) electrodes employed for spin-state detection. By monitoring the reflectance spectrum of the resonators as additional layers of hBN are transferred, we have optimized the overall hBN/nanotrench optical response, maximizing thereby the luminescence enhancement. Based on these finely tuned heterostructures, we achieved an enhanced DC magnetic field sensitivity as high as 6 × 10 –5 T/Hz 1/2 .