Observation of the Out‐of‐Plane Polarized Spin Current from CVD Grown WTe <sub>2</sub>
Shuyuan Shi, Jie Li, Chuang‐Han Hsu, Kyusup Lee, Yi Wang, Li Yang, Junyong Wang, Qisheng Wang, Hao Wu, Wenfeng Zhang, Goki Eda, Gengchiau Liang, Haixin Chang, Hyunsoo Yang
Abstract
Abstract Weyl semimetal Td‐phase WTe 2 possesses the spin‐resolved band structure with strong spin–orbit coupling, holding promises as a useful spin source material. The noncentrosymmetric crystalline structure of Td‐WTe 2 endows the generation of the out‐of‐plane polarized spin, which is of great interest in magnetic memory applications. Previously, WTe 2 was explored in spin devices based on mechanically exfoliated single crystal flakes with a size of micrometers. For practical spintronics applications, it is highly desirable to implement wafer‐scale thin films. In this work, centimeter‐scale chemical vapor deposition (CVD) grown Td‐WTe 2 thin films are used and the spin current generation is studied by the spin torque ferromagnetic resonance (ST‐FMR) technique. The in‐plane and out‐of‐plane spin conductivities of 7.36 × 10 3 () (Ωm) –1 and 1.76 × 10 3 () (Ωm) –1 , respectively, are found in CVD‐growth 5 nm‐WTe 2 . The current‐induced magnetization switching in WTe 2 /NiFe is demonstrated at room temperature in the domain wall motion regime, which may invigorate potential spintronic device innovations based on Weyl semimetals.