Millimeter-Wave Dual-Band Bandpass Filter With Large Bandwidth Ratio Using GaAs-Based Integrated Passive Device Technology
Guangxu Shen, Wenjie Feng, Wenquan Che, Yongrong Shi, Yiming Shen
Abstract
In this letter, a millimeter-wave (mm-wave) dual-band bandpass filter is proposed with large bandwidth ratio by using gallium arsenide (GaAs)-based integrated passive device (IPD) technology. To realize small chip size, one dual-mode on-chip resonator is designed by using quasi-lumped capacitors and microstrip lines. In addition, multiple transmission zeroes are generated by further introducing both the electric and magnetic couplings between adjacent resonators. To realize large bandwidth ratio of two passbands, the external quality factors are investigated at both passband, and can be independently controlled. For demonstration, a 28-/50-GHz dual-band bandpass filter is designed, fabricated, and measured. The fractional bandwidth ratio is 7.8, which is much larger than the reported on-chip filters. Meanwhile, very low insertion loss of 0.58-dB is realized for the lower passband at 28 GHz, indicating the proposed dual-band bandpass filter a promising application in mm-wave wireless systems.