Exploring current conduction dynamics in multiferroic BiFeO3 thin films prepared via modified chemical solution method
Waseem Ahmad Wani, Harihara Venkataraman, Kannan Ramaswamy
Abstract
Abstract The current study describes current conduction mechanisms in BiFeO 3 thin films prepared by using a modified chemical solution-based technique. In particular, in these films, X-ray photoelectron spectroscopy revealed that the defect causing Fe 2+ ions reduced by about 18% compared to the solution-based synthesis methods reported before, indicating better film quality. The leakage current density was measured to be 1.7 × 10 –6 A/cm 2 at an applied voltage of 1.5 V, which is one order of magnitude less than the previously reported work in a similar system. Oxygen annealing was found to be effective in further reducing the current conduction, making these films a suitable choice for device applications. The current–voltage curves exhibited three different behaviours of current conduction mechanisms in these films. In particular, when the applied electric field was increased, a transition from Ohmic conduction to trap-filled space charge limited conduction was observed. The presented investigations demonstrate the importance of deposition methods in determining the suitability of thin films for device applications.