Influence of charge traps on charge plasma-germanium double-gate TFET for RF/Analog & low-power switching applications
Ajeet K. Yadav, Sambhu P. Malik, Gaurav Singh Baghel, Robin Khosla
Topics & Concepts
TransconductanceOptoelectronicsLinearityMaterials scienceCharge (physics)CapacitancePlasmaReliability (semiconductor)TransistorField-effect transistorGermaniumPower (physics)Electrical engineeringElectrodeChemistryEngineeringSiliconPhysicsVoltagePhysical chemistryQuantum mechanicsSemiconductor materials and devicesAdvancements in Semiconductor Devices and Circuit DesignFerroelectric and Negative Capacitance Devices